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Research Areas and Projects
Research Areas and Projects
Relationship between resistance drift coefficient and temperature in Ge2Sb2Te5 line-cells.
Characterization of Resistance Drift in Phase Change Memory
Characterization of Resistance Drift in Phase Change Memory
Characterization of resistance drift in amorphous Ge2Sb2Te5 line-cells in cryogenic temperatures.
Effect of photo-excitation on resistance drift in amorphous Ge2Sb2Te5 line-cells.
Stopping of resistance drift in phase change memory devices with application of high electrical field.
Toggle operation in multi-contact phase change devices utilizing thermal crosstalk with application of consecutive write pulses.
Device Modeling
Device Modeling
Modeling of multi-contact phase change logic devices (flip-flop and multiplexer) and effect of scaling.
Modeling the effect of nucleation on resistance drift in phase change memory devices
Performance enhancement of n-channel MOSFET
Modeling of a bimorph temperature sensor
SEM images of line-cells fabricated at lithography limit to achieve random connectivity.
Hardware Security
Hardware Security
Engineering nano-scale devices for hardware security applications like physical unclonable function (PUF).
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